2STR2230 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Electrical characteristics

2STR2230

4/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -30V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -4V

-0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100µA

-30

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10mA

-30

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100µA

-5

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -0.1A

IB = -1mA

IC = -1A

IB = -100mA

IC = -2A

IB = -200mA

-0.25

-0.42

-0.17

-0.45

-0.8

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -1A

IB = -100mA

-0.9

-1.25

hFE (2)

DC current gain

IC = -50mA

VCE = -2V

IC = -0.5A

VCE = -2V

IC = -1A

VCE = -2V

IC = -1.5A

VCE = -2V

210

170

100

280

560

Transition frequency

IC = -0.1A

VCE = -5V

f = 100MHz

100

MHz

CCBO

Collector-base

capacitance

IE = 0

VCB = -10V

f = 1MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5A

VCC = -10V

IB1 = -IB2 = -150mA

200

2STR2230 数据表(PDF) 4 Page - STMicroelectronics

2STR2230 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

2STR2230 数据表(PDF) 4 Page - STMicroelectronics

2STR2230 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载