DA9316.003

March 23, 2005

4

ELECTRICAL CHARACTERISTICS

Static Performance

(test conditions Ta=+25C)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

s

Resolution

N

16

Bits

INL

±0.004

±0.006

%

DNL

±0.003

±0.006

%

Gain error

Gfse

±0.1

±0.2

%

Output Leakage Current

at IO1 (pin 16)

Iilk

10

nA

Offset Error

Relative accuracy 13 bits

Monotonic to 14 bits

Measured Using Internal Rfb

DAC

Register Loaded With All 1s

±0.0005

%

Temperature Stability

(test conditions Ta=+25C)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

s

Gain error

TCTCGFSE

±1.0

±2.0

pm/C

Integral Nonlinearity TC

TCINL

±0.1

±0.5

pm/C

Differential Nonlinearity TC

TCDNL

±0.1

±0.5

pm/C

Reference Input

(test conditions Ta=+25C)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

s

Input Resistance

Rref

2.5

5

7.5

kΩ

±25

v

Switching Characteristics

(test conditions Ta=+25C)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

s

Strobe Width

HBE and LBE Inputs

80

60

ns

Data Setup Time

Bit 1 to Bit 16

80

70

ns

Data Hold Time

Bit 1 to Bit 16

40

20

ns

NOTES:

1. Integral Nonlinearity is measured as the arithmetic

mean value of magnitudes of the greatest positive

deviation and the greatest negative deviation from the

theoretical value of any given input combination.

2. Differential Nonlinearity DNL is the deviation of an

output step from the theoretical value of 1 LSB for any

two adjacent digital input codes.

3.Guaranteed by design but not production tested.

4.Logic inputs are MOS gates. Iin typical is less than 1

nA at 25C.