STP80NF12_07 datasheet(3/12 Pages) STMICROELECTRONICS

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STP80NF12

Electrical ratings

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

STB_P_W80NF12 STP80NF12FP

VDS

Drain-source voltage (VGS = 0)

120

VDGR

Drain-gate voltage (RGS = 20KΩ)120

VGS

Gate-source voltage

± 22

(1)

Limited by Package

Drain current (continuous) at TC = 25°C

11 (2)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

60 (2)

IDM

(3)

Pulse width limited by safe operating area

Drain current (pulsed)

320

320 (2)

PTOT

Total dissipation at TC = 25°C

300

Derating factor

2.0

0.3

W/°C

dv/dt(4)

Starting TJ = 25

oC, I

D = 40A, VDD = 45V

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-247

D2PAK

TO-220

TO-220FP

RthJC

Thermal resistance junction-case Max

0.5

3.33

°C/W

RthJA

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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