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ISF1002 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISF1002
功能描述  Trench and Field-Stop IGBT
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISF1002 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1002 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1002 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1002 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISF1002
Trench and Field-Stop IGBT
www.iscsemi.com
2023-8-17
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.48
℃
/W
Rth j-c
Thermal Resistance,Junction to Case Diode
1.2
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 1mA
650
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
4.0
--
6.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 60A; VCE= 15V,
Tj=25℃
--
1.85
2.2
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 60A; VCE= 15V,
Tj=175℃
--
2.55
--
V
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
Tj=25℃
-
--
40
uA
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
Tj=175℃
-
--
4000
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
gts
Forward Transconductance
IC= 60A; VCE= 20V,
--
53
--
S
Cies
Input Capacitance
VGE = 0V,
VCE = 30V,
f = 1.0MHz
--
3789
--
pF
Coes
Output Capacitance
--
131
--
Cres
Reverse Transfer Capacitance
--
72
--
Qg
Total Gate Charge
VGE = 15V,
IC = 60A,
VCE = 520V
--
155
--
nC



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