BD237 datasheet(2/5 Pages) STMICROELECTRONICS

部件名	BD237

功能描述	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCE = rated VCEO

Tc = 150

0.1

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

for BD235 / BD236

for BD237 / BD238

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.1 A

0.6

VBE

∗

Base-Emitter Voltage

IC = 1 A

VCE = 2 V

1.3

hFE

∗

DC Current Gain

IC = 150 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

Transition frequency

IC = 250 mA

VCE = 10 V

MHz

hFE1/hFE2

∗ Matched Pairs

IC = 150 mA

VCE = 2 V

1.6

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

BD235 BD236 BD237 BD238

2/5

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