STV160NF02LA datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STV160NF02LA

功能描述	N-CHANNEL 20V - 0.0018W - 160A PowerSO-10 STripFET TM POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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December 2000

STV160NF02LA

N-CHANNEL 20V - 0.0018

Ω - 160A PowerSO-10

STripFET™ POWER MOSFET

(1) VDD = 35V, ID = 45A, RG = 22Ω , L = 330µH, Starting Tj=25°C

(**)Limited only maximum junction temperature allowed by

PowerSO-10

s

TYPICAL RDS(on) = 0.0018 Ω

s

LOW THRESHOLD DRIVE

s

ULTRA LOW ON-RESISTANCE

s

ULTRA FAST SWITCHING

s

100% AVALANCHE TESTED

s

VERY LOW GATE CHARGE

s

LOW PROFILE, VERY LOW PARASITIC

INDUCTANCE PowerSO-10 PACKAGE

DESCRIPTION

The STV160NF02LA represents the second gen-

eration of Application Specific STMicroelectronics

well established STripFET™ process based on a

very unique strip layout design. The resulting

MOSFET shows unrivalled high packing density

with ultra low on-resistance and superior switching

charactestics. Process simplification also trans-

lates into improved manufacturing reproducibility.

This device is particularly suitable for high current,

low voltage switching application where efficiency

is crucial

APPLICATIONS

s

BUCK CONVERTERS IN HIGH

PERFORMANCE TELECOM AND VRMs DC-

DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

Note: Marking will be STV160NF02AL

TYPE

VDSS

RDS(on)

ID

STV160NF02LA

20 V

< 0.0027

Ω

160 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

20

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

20

V

VGS

Gate- source Voltage

± 15

V

ID(**)

Drain Current (continuos) at TC = 25°C

160

A

ID

Drain Current (continuos) at TC = 100°C

113

A

IDM (q)

Drain Current (pulsed)

640

A

PTOT

Total Dissipation at TC = 25°C

210

W

Derating Factor

1.4

W/°C

EAS (1)

Single Pulse Avalanche Energy

330

mJ

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

PowerSO-10

1

10

INTERNAL SCHEMATIC DIAGRAM

CONNECTION DIAGRAM (TOP VIEW)

类似零件编号 - STV160NF02LA

制造商	部件名	数据表	功能描述
STMicroelectronics	STV160NF02L	96Kb / 8P	N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET Jun-1999
	STV160NF02LT4	355Kb / 8P	N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™II POWER MOSFET Feb-2004
	STV160NF02L	327Kb / 8P	N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET Feb-2004

More results

类似说明 - STV160NF02LA

制造商	部件名	数据表	功能描述
STMicroelectronics	STB160NF02L	289Kb / 7P	N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET™ POWER MOSFET Feb-2001
	STV160NF02L	96Kb / 8P	N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET Jun-1999
	STV160NF03L	96Kb / 8P	N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET Nov-1999
	STV60NE06-16	52Kb / 6P	N - CHANNEL 60V - 0.013ohm - 60A PowerSO-10 STripFET POWER MOSFET May-2000
	STV160NF02L	327Kb / 8P	N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET Feb-2004
	STV160NF03L	539Kb / 9P	N-CHANNEL 30V - 0.0019OHM - 160A PowerSO-10 STripFET TM POWER MOSFET Nov-2002
	STV160NF03LA	531Kb / 8P	N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET Dec-2000
	STV300NH02L	310Kb / 9P	N-channel 24V - 0.8mOHM - 280A - PowerSO-10 STripFET TM Power MOSFET 08-Feb-2007
	STB160NF3LL	414Kb / 13P	N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET 19-Jun-2006
	STV160NF02LT4	355Kb / 8P	N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™II POWER MOSFET Feb-2004

More results

STV160NF02LA 数据表(PDF) 1 Page - STMicroelectronics

STV160NF02LA 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STV160NF02LA

类似说明 - STV160NF02LA

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STV160NF02LA 数据表(PDF) 1 Page - STMicroelectronics

STV160NF02LA 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STV160NF02LA

类似说明 - STV160NF02LA

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数据表 下载

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