BU941ZP_05 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

BU941ZP BU941ZPFI

2/9

Table 2: Absolute Maximum Ratings

Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300

µs, duty cycle

≤ 1.5 %.

Symbol

Parameter

Value

Unit

BU941ZP

BU941ZPFI

Unit

VCEO

Collector-Emitter Voltage (IB= 0)

350

VEBO

Emitter-Base Voltage (IC= 0)

Collector Current

ICM

Collector Peak Current (tp < 5ms)

Base Current

IBM

Base Peak Current (tp < 5 ms)

Ptot

Total Dissipation at TC = 25 oC

155

Visol

Insulation Withstand Voltage (RMS) from All Three Leads to

External Heatsink

2500

Tstg

Storage Temperature

-65 to 175

°C

Max. Operating Junction Temperature

175

°C

TO-218

ISOWATT218

Unit

Rthj-case

Thermal Resistance Junction-Case

Max

0.97

2.3

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 300 V

Tj = 125 oC

100

0.5

µA

IEBO

Emitter Cut-off Current

(IC = 0 )

VEB = 5 V

VCL*

Clamping Voltage

IC = 100 mA

350

500

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 8 A

IB =100 mA

IC = 10 A

IB = 250 mA

IC = 12 A

IB = 300 mA

1.8

VBE(sat)* Base-Emitter

Saturation Voltage

IC = 8 A

IB =100 mA

IC = 10 A

IB = 250 mA

IC = 12 A

IB = 300 mA

2.2

2.5

2.7

hFE*

DC Current Gain

IC = 5 A

VCE = 10 V

300

Functional Test

VCC = 24 V

L = 7 mH

(see fig. 12)

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 12 V

L = 7 mH

VBE(off) = 0 V

RBE =47 W

VClamp = 300 V

IC = 7 A

IB = 70 mA

(see fig. 14)

0.5

µs

Diode Forward Voltage

IF = 10 V

2.5

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