BUL38D datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.56

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 800 V

Tc = 125

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 450 V

250

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

450

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 0.75 A

0.5

0.7

1.1

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

1.1

1.2

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.5 A

VCE = 5 V

IC = 2 A

VCE = 5 V

Group A

Group B

RESISTIVE LOAD

Storage Time

Fall Time

IC = 2.5 A

VCC = 150 V

IB1 = -IB2 = 0.5 A

tp = 30

µs

(see figure 2)

1.0

2.2

0.8

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

(see figure 1)

1.8

100

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

Tc = 125

(see figure 1)

1.3

100

µs

Diode Forward Voltage

IC = 2 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups

according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.

BUL38D

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