30N06

MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-087,A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate to Source Voltage

±20

V

30

A

Continuous Drain Current

21.3

A

Pulsed Drain Current (Note 1)

120

A

Avalanche Energy, Single Pulsed (Note 2)

300

mJ

Repetitive Avalanche Energy (Note 1)

8

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

7.5

V/ns

80

W

Derating Factor Above 25℃

0.53

W/℃

Operation Junction Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance, Junction-to-Case

1.8

°C/W

Thermal Resistance, Case-to-Sink

0.5

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage

60

V

1

µA

Drain-Source Leakage Current

10

µA

Forward

100

nA

Gate-Source Leakage

Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.06

V/℃

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State

Resistance

32

40

mΩ

Dynamic Characteristics

Input Capacitance

800

pF

Output Capacitance

300

pF

Reverse Transfer Capacitance

80

pF

Switching Characteristics

Turn-On Delay Time

12

ns

Turn-On Rise Time

79

ns

Turn-Off Delay Time

50

ns

Turn-Off Fall Time

(Note 4, 5)

52

ns

Total Gate Charge

20

30

nC

Gate-Source Charge

6

nC

Gate-Drain Charge (Miller Charge)

(Note 4, 5)

9

nC