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BUT30V 数据表(PDF) 2 Page - STMicroelectronics |
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BUT30V 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 0.05 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV Tc = 100 o C 1 5 mA mA ICEV Collector Cut-off Current (VBE = -5V) VCE = VCEV VCE = VCEV Tc = 100 o C 1 4 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A L = 25 mH Vclamp = 125 V 125 V hFE ∗ DC Current Gain IC = 100 A VCE = 5 27 VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 50 A IB = 2.5 A IC = 50 A IB = 2.5 A Tc = 100 o C IC = 100 A IB = 10 A IC = 100 A IB = 10 A Tc = 100 oC 0.45 0.55 0.7 0.9 0.9 1.2 0.9 1.5 V V V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 50 A IB = 2.5 A IC = 50 A IB = 2.5 A Tc = 100 o C IC = 100 A IB = 10 A IC = 100 A IB = 10 A Tc = 100 oC 1.15 1.1 1.45 1.55 1.4 1.4 1.8 1.9 V V V V diC/dt Rate of Rise of On-state Collector VCC = 300 V RC = 0 tp = 3 µs IB1 = 15 A Tc = 100 oC 270 350 A/ µs VCE(3 µs) Collector-Emitter Dynamic Voltage VCC = 300 V RC = 1 Ω IB1 = 15 A Tc = 100 oC 2.7 3.5 V VCE(5 µs) Collector-Emitter Dynamic Voltage VCC = 300 V RC = 1 Ω IB1 = 15 A Tc = 100 oC 2 2.5 V ts tf tc Storage Time Fall Time Cross-over Time IC = 100 A VCC = 90 V VBB = -5 V RBB = 0.47 Ω Vclamp = 125 V IB1 = 10 A L = 45 µH Tc = 100 oC 1 0.1 0.2 2 0.2 0.35 µs µs µs VCEW Maximum Collector Emitter Voltage Without Snubber ICWoff = 150 A IB1 = 10 A VBB = -5 V VCC = 90 V L = 30 µH RBB = 0.5 Ω Tc = 125 oC 125 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BUT30V 2/7 |
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