BUT32V datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 5

Ω)

VCE = VCEV

Tc = 100

ICEV

Collector Cut-off

Current (VBE = -5)

VCE = VCEV

Tc = 100

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.2 A

L = 25 mH

Vclamp = 300 V

300

hFE

∗

DC Current Gain

IC = 40 A

VCE = 5 V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 40 A

IB = 4 A

IC = 40 A

IB = 4 A

Tc = 100

0.6

1.2

0.9

1.9

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 40 A

IB = 4 A

IC = 40 A

IB = 4 A

Tc = 100

1.12

1.1

1.3

diC/dt

Rate of Rise of

On-state Collector

VCC = 300 V

RC = 0

tp = 3

µs

IB1 = 6 A

Tc = 100

120

180

µs

VCE(3

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 6.2

Ω

IB1 = 6 A

Tc = 100

VCE(5

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 6.2

Ω

IB1 = 6 A

Tc = 100

1.8

Storage Time

Fall Time

Cross-over Time

IC = 40 A

VCC = 250 V

VBB = -5 V

RBB =

0.6 Ω

Vclamp = 300 V

IB1 = 4 A

L = 0.3 mH

Tc = 100

1.9

0.12

0.35

0.4

0.7

µs

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

ICWoff = 60 A

IB1 = 4 A

VBB = -5 V

VCC = 50 V

L = 42

µH

RBB = 0.6

Ω

Tc = 125

300

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUT32V

2/7

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