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BUT100 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUT100
功能描述  HIGH POWER NPN SILICON TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUT100 数据表(HTML) 2 Page - STMicroelectronics

  BUT100 Datasheet HTML 1Page - STMicroelectronics BUT100 Datasheet HTML 2Page - STMicroelectronics BUT100 Datasheet HTML 3Page - STMicroelectronics BUT100 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.58
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
Ω)
VCE = VCEV
VCE = VCEV
TC= 100
o C
1
5
mA
mA
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = VCEV
VCE = VCEV
TC = 100
oC
1
4
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
L = 25mH
125
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 50mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 50A
IB = 2.5A
IC = 100A
IB = 10A
IC = 50A
IB = 2.5A
Tc = 100
oC
IC = 100A
IB = 10A
Tc = 100
oC
0.9
0.9
1.2
1.5
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 50A
IB = 2.5A
IC = 100A
IB = 10A
IC = 50A
IB = 2.5A
Tc = 100
oC
IC = 100A
IB = 10A
Tc = 100
oC
1.4
2
1.4
2.1
V
V
V
V
dic/dt
Rate of Rise of
on-state Collector
Current
VCC = 100V
RC = 0
IB1 = 5A
Tp = 3
µs
Tc = 100
o C
180
A/
µs
ts
tf
tc
INDUCTIVE LOAD
Storage time
Fall Time
Crossover Time
VCC = 90V
Vclamp = 125 V
IC = 50A
IB1 = 2.5A
VBB = - 5V
LC = 80
µH
RB2 = 1
Ω
Tc = 100
o C
2
0.2
0.35
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
without Snubber
VCC = 90V
ICWoff = 150A
VBB = - 5 V
IB1 = 10A
LC = 30
µH
RB2 = 1
Ω
Tc = 125
oC
125
V
∗ Pulsed: Pulse duration = 3µs, duty cycle = 2 %
BUT100
2/4



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