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BUV28 数据表(PDF) 2 Page - STMicroelectronics |
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BUV28 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.76 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 5 0Ω) VCE = 400V Tc = 125 oC3 mA ICEX Collector Cut-off Current (VBE = -1.5V) VCE = 400V Tc = 125 oC1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A 200 V VEBO Emitter-Base Voltage (IC = 0) IE = 50 mA 7 30 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IB = 0.3 A IC = 6 A IB = 0.6 A 0.7 1.5 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 6 A IB = 0.6 A 2 V ton ts tf RESISTIVE LOAD Storage Time Fall Time Turn-on Time VCC = 150 V IC = 6 A VBE = - 6 V IB1 = 0.6 A RBB = 5 Ω IB2 = - 1.2 A 1 1.5 0.25 µs µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time VCC = 150 V IC = 6 A IB1 = 0.6 A VBE = - 5 V LB = 3 µH Tc = 125 oC 3 0.2 µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 % BUV28 2/4 |
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