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BUX98APW 数据表(PDF) 2 Page - STMicroelectronics |
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BUX98APW 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 5 Ω) VCE = 1000 V VCE = 1000 V TC = 125 oC 200 2 µA mA ICES Collector Cut-off Current (VBE = 0 ) VCE = 1000 V VCE = 1000 V TC = 125 oC 200 2 µA mA ICEO Collector Cut-off Current (IB = 0) VCE = 450 V 2 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 2 mA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 100 mA 7 V VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 200 mA L = 25 mH 450 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 16 A IB = 3.2 A 1.2 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 16 A IB = 3.2 A 1.5 V ton ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time VCC = 150 V IC = 16 A IB1 = - IB2 = 3.2 A 1 3 0.8 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % BUX98APW 2/4 |
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