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MJ4032 数据表(PDF) 2 Page - STMicroelectronics |
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MJ4032 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off Current (RBE = 1K Ω) VCE = 100 V VCE = 100 V Tc = 150 oC 1 5 mA mA ICEO Collector Cut-off Current (IB = 0) VCE = 50 V 3 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 5 mA V(BR)CEO ∗ Collector-Emitter Breakdown Voltage IC = 100 mA 100 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 10 A IB = 40 mA IC = 16 A IB = 80 mA 2.5 4 V V VBE ∗ Base-Emitter Voltage IC = 10 A VCE = 3 V 3 V hFE ∗ DC Current Gain IC = 10 A VCE = 3 V 1000 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. MJ4032 / MJ4035 2/4 |
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