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ST4460FX 数据表(PDF) 4 Page - STMicroelectronics

部件名 ST4460FX
功能描述  High voltage fast-switching NPN Power transistor
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST4460FX 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
ST4460FX
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 1000V
VCE = 1000V;
TC= 125°C
100
500
µA
µA
ICEO
Collector cut-off current
(IB =0)
VCE = 500V
250
µA
VCEO(sus)
(1)
Collector-emitter
sustaining voltage
(IB =0)
IC = 10mA
500
V
VEBO
Emitter-base voltage
(Ic =0)
IE = 10mA
9V
VCE(sat)
(1)
1.
Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
Collector-emitter
saturation voltage
IC = 6A
IB = 1.2A
IC = 8A
IB = 1.6A
IC = 10A
IB = 2A
1
1.5
3
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 6A
IB = 1.2A
IC = 8A
IB = 1.6A
1.5
1.6
V
V
hFE
(1)
DC current gain
IC = 1.2A
VCE = 5V
IC = 6A
VCE = 5V
28
10
45
ts
tf
Inductive load
Storage time
Fall time
IC = 8A
IB1 = 1.6A
VBE(off) = -5V
RBB = 0.4Ω
VCL = 350V
L = 200
µH
1.5
55
2.3
100
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 8A
IB1 = 1.6A
VBE(off) = -5V
RBB = 0.4Ω
VCL = 350V
L = 200
µH
TC = 100°C
1.9
80
µs
ns



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