ST13007DFP datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.47

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 700 V

Tc = 100

0.5

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 9 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 5 A

IB = 1 A

IC = 8 A

IB = 2 A

IC = 5 A

IB = 1 A

Tc = 100

0.8

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 5 A

IB = 1 A

IC = 5 A

IB = 1 A

Tc = 100

1.2

1.6

1.5

hFE

∗

DC Current Gain

IC = 2 A

VCE = 5 V

IC = 5 A

VCE = 5 V

Diode Forward

Voltage

IC = 3 A

2.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 5 A

VCL = 250 V RBB = 0

Ω

IB1 = 1 A

VBE(off) = -5 V

L = 200

µH (see figure 1)

1.7

2.3

150

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 5 A

VCL = 250 V RBB = 0

Ω

ΙB1 = 1 A

VBE(off) = -5 V

L = 200

µH TC = 125 oC

(see figure 1)

2.2

150

µs

* Pulsed: Pulse duration = 300

µs, duty cycle 2 %.

ST13007DFP

2/7

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