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EMC1053 数据表(PDF) 12 Page - SMSC Corporation |
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EMC1053 数据表(HTML) 12 Page - SMSC Corporation |
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12 / 26 page ![]() 1°C Triple Temperature Sensor with Resistance Error Correction & Hotter of Two Zones Datasheet Revision 1.37 (02-05-07) 12 SMSC EMC1053 DATASHEET 3.3.1 Conversion Rates The EMC1053 may be configured for different conversion rates based on the system requirements. The available rates are 1 full set of conversions per second to 16 full sets of conversions per second. The conversion rate is configured as described in Section 4.4. The available conversion rates are shown in Table 4.4. 3.3.2 Dynamic Averaging The EMC1053 temperature channels support a new feature that measures the external diode channels for an extended time based on the selected conversion rate. This functionality can be disabled as described in Section 4.5 for increased power savings at the lower conversion rates. When Dynamic Averaging is enabled, the device will automatically adjust the sampling and measurement time for both external diode channels. This allows the device to average 2x or 4x longer than the normal 11 bit operation while still maintaining the selected conversion rate. The benefits of Dynamic Averaging are improved noise rejection due to the longer integration time as well as less random variation on the temperature measurement. The Dynamic Averaging applies when a One-Shot command is issued. The device will perform the desired averaging during the one-shot operation according to the selected conversion rate. The Dynamic Averaging will affect the average supply current based on the chosen conversion rate as shown in Table 3.1. 3.4 Temperature Monitors In general, thermal diode temperature measurements are based on the change in forward bias voltage of a diode when operated at two different currents. This ΔVBE is then proportional to absolute temperature as shown in the following equation: Table 3.1 Supply Current vs. Conversion Rate and ADC Averaging Factor CONVERSION RATE ADC AVERAGING FACTOR 4X (MAX_RES = 1) (DA_n = 0) 2X (MAX_RES = 0) (DA_n = 0) 1X (DA_n = 1) 1 / sec 190uA 132uA 105uA 2 / sec 315uA 205uA 150uA 4 / sec 580uA 350uA 235uA 8 / sec N/A 640uA 405uA 16 / sec N/A N/A 750uA where: k = Boltzmann’s constant T = absolute temperature in Kelvin [1] q = electron charge η = diode ideality factor ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = − = Δ LOW HIGH LOW BE HIGH BE BE I I q kT V V V ln _ _ η |
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