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STB85NF3LL 数据表(PDF) 4 Page - STMicroelectronics

部件名 STB85NF3LL
功能描述  N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB85NF3LL 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB85NF3LL
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
1V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
VGS = 4.5V, ID = 40A
0.006
0.0075
0.008
0.0095
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 40 A
30
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
2210
635
138
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =24V, ID = 60A
VGS =4.5V
30
9
12.5
40
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 15V, ID= 30A,
RG=4.7Ω, VGS=4.5V
Figure 12 on page 8
22
130
36.5
36.5
ns
ns
ns
ns
td(off)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp =24V, ID =30A
RG =4.7Ω, VGS = 4.5V
Figure 14 on page 8
32
23
40
ns
ns
ns



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