MRF9200LSR3 datasheet(2/12 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF9200LR3 MRF9200LSR3

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 μAdc)

VGS(th)

1.5

2.7

3.5

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 2400 mAdc)

VGS(Q)

3.7

4.5

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 6.0 Adc)

VDS(on)

—

0.25

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 6.7 Adc)

gfs

—

8.8

—

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

2.5

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N-CDMA,

f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz

Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

17.5

—

Drain Efficiency

ηD

—

Adjacent Channel Power Ratio

ACPR

—

-46.5

-45

dBc

Input Return Loss

IRL

—

-13

-9

1. Part internally matched both on input and output.

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