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STW34NB20 数据表(PDF) 2 Page - STMicroelectronics |
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STW34NB20 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() STW34NB20 2/10 Table 3. Absolute Maximum Ratings Note: 1. Pulse width limited by safe operating area Table 4. Thermal Data Table 5. Avalanche Characteristics Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 200 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont.) at TC = 25 °C 34 A ID Drain Current (cont.) at TC = 100 °C 21 A IDM (1) Drain Current (pulsed) 136 A Ptot Total Dissipation at TC = 25 °C 180 W Derating Factor 1.44 W°/C Tstg Storage Temperature -65 to 150 °C Tj Max. Operating Junction Temperature 150 °C Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 0.69 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 34 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 50 V) 650 mJ |
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