Electrical characteristics

STD55NH2LL - STD55NH2LL-1

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2

Electrical characteristics

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

24

V

Zero gate voltage

1

10

µA

µA

Gate-body leakage

±100

nA

Gate threshold voltage

1

V

Static drain-source on

resistance

0.010

0.012

0.011

0.0135

Ω

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

18

S

Input capacitance

Output capacitance

Reverse transfer

capacitance

990

385

40

pF

pF

pF

Gate Input Resistance

f = 1 MHz Gate

DC Bias = 0 Test Signal

Level = 20 mV Open

Drain

1.3

Ω

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(see Figure 13)

15

56

13

10

ns

ns

ns

ns

Total gate charge

Gate-source charge

Gate-drain charge

0.44V

(see Figure 14)

8.7

4.2

2.4

11

nC

nC

nC

(2)

2.

Qoss = Coss*

∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A

Output charge

7.6

nC