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STD616A 数据表(PDF) 2 Page - STMicroelectronics

部件名 STD616A
功能描述  HIGH VOLTAGE NPN POWER TRANSISTOR
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD616A 数据表(HTML) 2 Page - STMicroelectronics

  STD616A_03 Datasheet HTML 1Page - STMicroelectronics STD616A_03 Datasheet HTML 2Page - STMicroelectronics STD616A_03 Datasheet HTML 3Page - STMicroelectronics STD616A_03 Datasheet HTML 4Page - STMicroelectronics STD616A_03 Datasheet HTML 5Page - STMicroelectronics STD616A_03 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0 V)
VCE = 1000 V
VCE = 1000 V
Tj = 125
oC
50
0.5
µA
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
450
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 1 mA
12
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 250 mA
IB = 65 mA
IC = 0.8 A
IB = 250 mA
0.3
0.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 250 mA
IB = 65 mA
IC = 0.8 A
IB = 250 mA
1
1.2
V
V
hFE
∗
DC Current Gain
IC = 200
µA
VCE = 5 V
IC = 300 mA
VCE = 5 V
IC = 480 mA
VCE = 5 V
IC = 1.6 A
VCE = 5 V
17
25
12
4
ton
ts
tf
RESISTIVE LOAD
Turn On Time
Storage Time
Fall Time
VCC = 250 V
IC = 250 mA
IB1 = 65 mA
IB2= -130 mA
0.2
5
0.65
µs
µs
µs
ton
ts
tf
RESISTIVE LOAD
Turn On Time
Storage Time
Fall Time
VCC = 250 V
IC = 0.8 A
IB1 = 160 mA
IB2 = -0.4 A
1
2.5
0.35
µs
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
Vcl = 300 V
IC = 250 mA
IB1 = 65 mA
IB2 = -130 mA
L = 200
µH
5
0.5
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
Vcl = 300 V
IC = 0.8 A
IB1 = 160 mA
IB2= -0.4 A
L = 200
µH
2.5
0.25
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
STD616A
2/6



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