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STGD6NC60HT4 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGD6NC60HT4
功能描述  N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD6NC60HT4 数据表(HTML) 5 Page - STMicroelectronics

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STGD6NC60H
Electrical characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 25°C
(see Figure 17)
12
5
612
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 17)
13
4.3
560
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A,
RGE = 10Ω, VGE =
15V,TJ=25°C
(see Figure 17)
40
76
100
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 17)
60
98
124
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG=10Ω, VGE=15V,
Tj=25°C
(see Figure 17)
20
68
88
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG=10Ω, VGE= 15V,
Tj= 125°C
(see Figure 17)
37
93
130
µJ
µJ
µJ



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