STGD7NB60K datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STGD7NB60K

功能描述	N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Electrical characteristics

STGD7NB60K - STGP7NB60K

4/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 7A

VGE= 15V, IC= 7A, Tc= 125°C

2.3

1.9

2.8

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

500

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

gfs

Forward transconductance

VCE = 15V, IC= 7A

3.7

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

495

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480V, IC = 7A,

VGE = 15V,

(see Figure 17)

32.7

5.9

18.3

tscw

Short circuit withstand time

VCE=0.5V VBR(CES), RG=10Ω

VGE=15V, Tj=125°C

µs

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