STGF10NB60SD

Electrical characteristics

5/13

Table 5.

Switching on/off (inductive load)

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

(1)

1.

Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode

recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as

external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)

Turn-on delay time

Current rise time

Turn-on current slope

Turn-on switching losses

Tj= 25°C (see Figure 15)

0.7

0.46

8

0.6

µs

µs

A/µs

mJ

(2)

2.

Turn-off losses include also the tail of the collector current

Off voltage rise time

Turn-off delay time

Current fall time

Turn-off switching losses

2.2

1.2

1.2

5.0

µs

µs

µs

mJ

(2)

Off voltage rise time

Turn-off delay time

Current fall time

Turn-off switching losses

Tj=125 °C (see Figure 15)

3.8

1.2

1.9

8.0

µs

µs

µs

mJ

Table 6.

Collector-emitter diode

Symbol

Parameter

Test condictions

Min

Typ.

Max

Unit

Forward current

Forward current pulsed

7

56

A

A

Forward on-voltage

1.4

1.15

1.9

V

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Tj =125°C, di/dt =100A/

µs

(see Figure 18)

50

70

2.7

ns

nC

A