STGF20NB60S datasheet(2/11 Pages) STMICROELECTRONICS

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STGF20NB60S

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC = 25°C (#)

Collector Current (continuous) at TC = 100°C (#)

ICM ( )

Collector Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.32

W/°C

VISO

Insulation withstand voltage AC (t=1sec, Tc=25°C)

2500

Tstg

Storage Temperature

–55 to 150

°C

Operating Junction Temperature range

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

3.15

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

62.5

°C/W

Maximum Lead Temperature for Soldering Purpose (1.6 mm

from case, for 10 sec.)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off Current

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

±100

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250 µA

2.5

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 20 A, Tj= 25°C

VGE = 15V, IC = 20A, Tj=150°C

1.25

1.2

1.7

()

JMAX

–

THJ

–

CESAT MAX

() TC IC

()

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