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STGP10NB60SFP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP10NB60SFP
功能描述  N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10NB60SFP 数据表(HTML) 2 Page - STMicroelectronics

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STGP10NB60S - STGP10NB60SFP - STGB10NB60S
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Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
Symbol
Parameter
Value
Unit
TO-220/D²PAK
TO-220FP
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C20
A
IC
Collector Current (continuous) at 100°C10
A
ICM (1)
Collector Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
80
25
W
Derating Factor
0.64
0.20
W/°C
VISO
Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)
--
2500
V
Tstg
Storage Temperature
– 55 to 150
°C
Tj
Operating Junction Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
TO-220
D²PAK
1.56
°C/W
TO-220FP
5.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
°C/W
TL
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter
Breakdown Voltage
IC = 250 µA, VGE = 0
600
V
VBR(ECS)
Emitter-Collector
Breakdown Voltage
IC = 1mA, VGE = 0
20
V
ICES
Collector cut-off
(VGE = 0)
VGE = Max Rating, Tc=25°C
VCE = Max Rating, Tc=125°C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE= VGE, IC= 250 µA
2.5
5
V
VCE(SAT)
Collector-Emitter
Saturation Voltage
VGE=15 V, IC= 5 A,
VGE=15 V, IC= 10 A,
VGE=15 V, IC= 10 A, Tj= 125°C
1.15
1.35
1.25
1.7
V
V
V



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