STGD7NB60K datasheet(5/15 Pages) STMICROELECTRONICS

5 / 15 page

STGD7NB60K - STGP7NB60K

Electrical characteristics

5/15

Table 5.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Current rise time

VCC = 480V, IC = 7A

RG= 10Ω, VGE= 15V,

Tj= 25°C (see Figure 18)

(di/dt)on

Eon

(1)

Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in

a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the

same temperature (25°C and 125°C)

Turn-on delay time

Turn-on switching losses

VCC = 480V, IC = 7A

RG= 10Ω, VGE= 15V,

Tj=125°C (see Figure 18)

980

A/µs

µJ

tr(Voff)

td(off)

Eoff

(2)

Ets

Turn-off losses include also the tail of the collector current

Cross-over time

Off voltage rise time

Turn-off delay time

Current fall time

Turn-off switching losses

Total switching losses

VCC = 480V, IC = 7A,

RGE = 10Ω, VGE = 15V,

TJ=25°C (see Figure 18)

105

100

140

200

µJ

tr(Voff)

td(off)

Eoff

(1)

Ets

Cross-over time

Off voltage rise time

Turn-off delay time

Current fall time

Turn-off switching losses

Total switching losses

VCC = 480V, IC = 7A,

RGE=10Ω, VGE =15V,

Tj=125°C (see Figure 18)

227

150

300

395

µJ

STGD7NB60K 数据表(PDF) 5 Page - STMicroelectronics

STGD7NB60K 数据表(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表下载