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STTH802B 数据表(PDF) 2 Page - STMicroelectronics |
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STTH802B 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics STTH802 2/11 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.73 x IF(AV) + 0.021 IF 2 (RMS) Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 16 A IF(AV) Average forward current, δ = 0.5 TO-220A, DPAK, D2PAK Tc = 145° C 8A TO-220FPAC Tc = 125° C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature 175 ° C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AC, DPAK, D2PAK 3.2 ° C/W TO-220FPAC 5.5 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 6 µA Tj = 125° C 6 60 VF (2) Forward voltage drop Tj = 25° C IF = 8 A 0.95 1.05 V Tj = 150° C 0.8 0.90 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % |
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