2 Electrical characteristics

STGP10NB60SD

4/12

Table 5.

Switching On/Off (inductive load)

Table 6.

Switching energy (inductive load)

Table 7.

Collector-emitter diode

(1)Pulse width limited by max. junction temperature

(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

(3)Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a

co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)

(4) Turn-off losses include also the tail of the collector current

(5) Calculated according to the iterative formula:

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Current Rise Time

Turn-on Current Slope

(see Figure 18)

0.7

0.46

8

ns

ns

A/µs

Cross-over Time

Off Voltage Rise Time

Current Fall Time

(see Figure 18)

2.2

1.2

1.2

µs

µs

µs

Cross-over Time

Off Voltage Rise Time

Current Fall Time

(see Figure 18)

3.8

1.2

1.9

µs

µs

µs

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Eon Note 3

Turn-on Switching Losses

Turn-off Switching Losses

Total Switching Losses

(see Figure 18)

0.6

5.0

5.6

mJ

mJ

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward Current

Forward Current pulsed

7

56

A

A

Forward On-Voltage

1.4

1.15

1.9

V

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Tj =125°C, di/dt = 100A/

µs

(see Figure 19)

50

70

2.7

ns

nC

A

I

C

T

C

()

T

JMAX

T

C

–

R

THJ

C

–

V

CE SAT MAX

() TC IC

,

()

×

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