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STTH802G 数据表(PDF) 1 Page - STMicroelectronics |
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STTH802G 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  September 2006 Rev 2 1/11 STTH802 Ultrafast recovery diode Main product characteristics Features and benefits ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time ■ High junction temperature Description The STTH802 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, and D2PAK this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes IF(AV) 8 A VRRM 200 V Tj (max) 175° C VF (typ) 0.8 V trr (typ) 17 ns Part Number Marking STTH802D STTH802 STTH802FP STTH802 STTH802B STTH802 STTH802B-TR STTH802 STTH802G STTH802 STTH802G-TR STTH802 TO-220AC STTH802D DPAK STTH802B TO-220FPAC STTH802FP A A A K K K K A A K K NC NC DPAK STTH802G 2 www.st.com |
类似零件编号 - STTH802G |
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类似说明 - STTH802G |
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