STN951 datasheet(4/8 Pages) STMICROELECTRONICS

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Electrical characteristics

STN951

4/8

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -60V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5V

-0.1

µA

V(BR)CBO (2)

Collector-base

Breakdown voltage

(IE =0)

IC = -100µA

-60

V(BR)CEO (2)

Collector-emitter

Breakdown voltage

(IB =0)

IC = -10mA

-60

V(BR)EBO (2)

Collector-base

Breakdown voltage

(IC =0)

IE = -100µA

-6

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -100mA IB = -5mA

IC = -1A

IB = -50mA

IC = -2A

IB = -50mA

IC = -5A

IB = -200mA

-10

-70

-140

-350

-50

-120

-250

-500

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -4A

IB = -200mA

-1

-1.15

VBE(on) (2) Base-emitter on voltage

IC = -4A

VCE = -1V

-0.89

-1

hFE (2)

DC current gain

IC = -10mA

VCE = -1V

IC = -2A

VCE = -1V

IC = -5A

VCE = -1V

IC = -10A

VCE = -1V

150

300

270

350

Transition frequency

VCE = -10V

IC = -100mA

130

MHz

CCBO

Collector-base

capacitance

VCB = -10V

f = 1MHz

ton

Resistive load

Turn-on time

Storage time

Fall time

IC = -1A

VCC = -30V

IB1 = - IB2 = -0.1A

600

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