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STP45NF3LLFP 数据表(PDF) 5 Page - STMicroelectronics |
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STP45NF3LLFP 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STP45NF3LL - STB45NF3LL Electrical characteristics 5/16 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 45 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 180 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 45A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, VDD = 15V di/dt = 100A/µs, (see Figure 17) 35 44 2.5 ns nC A |
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