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STP45NF3LL 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP45NF3LL
功能描述  N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP45NF3LL 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP45NF3LL - STB45NF3LL
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
1
µA
VDS=Max rating, TC=125°C
10
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±16V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
1
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 22.5A
VGS = 4.5V, ID = 22.5A
0.014
0.016
0.018
0.020
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
VDS = 15V, ID=22.5A
20
S
Ciss
Input capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
800
pF
Coss
Output capacitance
250
pF
Crss
Reverse transfer
capacitance
60
pF
Qg
Total gate charge
VDD = 24V, ID = 45A,
VGS = 5V
12.5
17
nC
Qgs
Gate-source charge
4.6
nC
Qgd
Gate-drain charge
5.2
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15V, ID = 22.5A
RG =4.7Ω VGS = 4.5V
(see Figure 15)
17
100
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 15V, ID = 22.5A,
RG =4.7Ω, VGS = 4.5V
(see Figure 15)
20
21
ns
ns



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