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P75NS04Z 数据表(PDF) 5 Page - STMicroelectronics

部件名 P75NS04Z
功能描述  N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

P75NS04Z 数据表(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
5/12
Table 6.
Switching on/off
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 20V, ID = 40A
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
16
248
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD= 20V, ID = 40A
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
53
85
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on Voltage
ISD=80A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
(see Figure 17)
53
91
3.4
ns
nC
A



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