STX13005-AP datasheet(2/9 Pages) STMICROELECTRONICS

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STX13005

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Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

Symbol

Parameter

Unit

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-ambient

Max

44.6

150

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 700 V

Tj = 125 oC

ICEO

Collector Cut-off Current

(IB = 0 )

VCE = 400 V

V(BR)EBO Emitter-Base

Breakdown Voltage

(IC = 0 )

IE = 10 mA

L = 25 mH

VCE(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 10 mA

400

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 200 mA

IC = 2 A

IB = 500 mA

IC = 3 A

IB = 750 mA

0.5

0.6

VBE(sat)* Base-Emitter

Saturation Voltage

IC = 1 A

IB = 200 mA

IC = 2 A

IB = 500 mA

1.2

1.6

hFE*

DC Current Gain

IC = 1 A

VCE = 5 V

IC = 2 A

VCE = 5 V

RESISTIVE LOAD

Storage Time

Fall Time

IC = 2 A

VCC = 125 V

IB1 = - IB2 = 400 mA

tp = 30 µs

(see figure 16)

1.65

260

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 1 A

VClamp = 300 V

IB1 = 200 mA

VBE(off) = -5 V

L = 50 mH

RBB = 0

(see figure 15)

0.8

150

µs

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