STGW60H65DFB datasheet(3/21 Pages) STMICROELECTRONICS

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Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter saturation voltage

VGE = 15 V, IC = 60 A

1.60

VGE = 15 V, IC = 60 A,

TJ = 125 °C

1.75

VGE = 15 V, IC = 60 A,

TJ = 175 °C

1.85

Forward on-voltage

IF = 60 A

2.6

IF = 60 A, TJ = 125 °C

1.7

IF = 60 A, TJ = 175 °C

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

7792

Coes

Output capacitance

262

Cres

Reverse transfer capacitance

158

Total gate charge

VCC = 520 V, IC = 60 A,

VGE = 0 to 15 V

(see Figure 28. Gate

charge test circuit)

306

Qge

Gate-emitter charge

126

Qgc

Gate-collector charge

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Electrical characteristics

DS9535 - Rev 8

page 3/21

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