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STGWA60H65DFB 数据表(PDF) 6 Page - STMicroelectronics |
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STGWA60H65DFB 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 21 page ![]() Figure 7. VCE(sat) vs collector current VCE(sat) 1.4 1.2 0 20 IC(A) (V) 40 60 80 2.2 2.0 1.8 1.6 VGE=15V TJ=175°C TJ=25°C TJ=-40°C 2.4 100 GIPD270820131423FSR Figure 8. Forward bias safe operating area 10 2 10 1 10 0 10 0 10 1 10 2 IC (A) VCE(V) Tj≤175°C Tc=25°C VGE=15V single pulse 1ms 10µs 1µs 100µs GIPG300320151744ALS Figure 9. Diode VF vs forward current GIPG170415EWF7WDVF 2.8 2.4 2.0 1.6 1.2 0.8 20 40 60 80 100 VF (V) IF (A) TJ =-40°C TJ =25°C TJ =175°C Figure 10. Normalized V(BR)CES vs junction temperature V(BR)CES (norm) 1.1 1.0 0.9 -50 TJ(°C) 0 50 100 150 IC=2mA GIPD280820131415FSR Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (norm) 0.8 0.7 0.6 -50 TJ(°C) 0 50 100 150 0.9 1.0 IC=1mA GIPD280820131503FSR Figure 12. Gate charge vs gate-emitter voltage VGE (V) 4 2 0 0 Qg(nC) 50 100 150 200 6 8 250 300 350 10 12 14 GIPD280820131507FSR Vcc=520V, Ic=60A, IG=1mA STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) DS9535 - Rev 8 page 6/21 |
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