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M25P10-AVMP6 数据表(PDF) 47 Page - STMicroelectronics |
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M25P10-AVMP6 数据表(HTML) 47 Page - STMicroelectronics |
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47 / 49 page ![]() M25P10-A Revision history 47/49 13 Revision history Table 24. Document revision history Date Revision Changes 25-Feb-2001 1.0 Document written 12-Sep-2002 1.1 VFQFPN8 package (MLP8) added. Clarification of descriptions of entering Standby Power mode from Deep Power-down mode, and of terminating an instruction sequence or data-out sequence 13-Dec-2002 1.2 Typical Page Program time improved. Write Protect setup and hold times specified, for applications that switch Write Protect to exit the Hardware Protection mode immediately before a WRSR, and to enter the Hardware Protection mode again immediately after 21-Feb-2003 1.3 Erroneous address ranges corrected in Memory Organisation table 24-Nov-2003 2.0 Table of contents, warning about exposed paddle on MLP8, and Pb-free options added. 40MHz AC Characteristics table included as well as 25MHz. ICC3(max), tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8 package 08-Mar-2005 3.0 Devices with Process technology Code X added (Read Identification (RDID) and Table 20: AC Characteristics (50MHz Operation, Device Grade 6)) added. SO8 narrow package specifications updated. Notes 1 and 2 removed from Table 23: Ordering information scheme. Note 1 to Table 9: Absolute Maximum Ratings changed, note 2 removed and TLEAD values removed. Small text changes. End timing line of tSHQZ modified in Figure 25: Output Timing. 01-Apr-2005 4.0 Read Identification (RDID), Deep Power-down (DP) and Release from Deep Power-down and Read Electronic Signature (RES) instructions, and Active Power, Standby Power and Deep Power-Down Modes paragraph clarified. 01-Aug-2005 5.0 Updated Page Program (PP) instructions in Page Programming, Page Program (PP) and Table 16: Instruction Times (Device Grade 6). |
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