MBD301 datasheet(1/5 Pages) ONSEMI

部件名	MBD301

功能描述	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes

PDF	5 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

1 / 5 page

January, 2007 − Rev. 4

1

Publication Order Number:

MBD301/D

MBD301, MMBD301LT1

Preferred Device

Silicon Hot−Carrier Diodes

SCHOTTKY Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301

• Pb−Free Packages are Available

MAXIMUM RATINGS

MBD301

MMBD301LT1

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PF

280

2.8

200

2.0

mW

mW/

°C

Operating Junction

Temperature Range

TJ

−55 to +125

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

MBD

301

AYWW

G

Preferred devices are recommended choices for future use

and best overall value.

TO−92

(TO−226AC)

CASE 182

STYLE 1

4T M

G

MBD301

SOT−23

(TO−236)

CASE 318

STYLE 8

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

1

2

3

1

2

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

1

MMBD301LT1

M

= Date Code

G

= Pb−Free Package

MARKING

DIAGRAM

(Note: Microdot may be in either location)

类似零件编号 - MBD301

制造商	部件名	数据表	功能描述
Motorola, Inc	MBD301	130Kb / 6P	30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
ON Semiconductor	MBD301	90Kb / 4P	SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 1997
Leshan Radio Company	MBD301	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD301G	135Kb / 5P	Silicon Hot-Carrier Diodes August, 2009 ??Rev. 5
ON Semiconductor	MBD301G	95Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 8

More results

类似说明 - MBD301

制造商	部件名	数据表	功能描述
Leshan Radio Company	MMBD301LT1	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	64Kb / 4P	Silicon Hot?묬arrier Diodes Schottky Barrier Diodes October, 2006 ??Rev. 4
ON Semiconductor	MMBD452LT1	53Kb / 3P	Dual Hot?묬arrier Diodes Schottky Barrier Diodes February, 2006 ??Rev. 3
Leshan Radio Company	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
ON Semiconductor	MMBD452LT1G	124Kb / 3P	Dual Hot-Carrier Diodes Schottky Barrier Diodes August, 2009 ??Rev. 4
Leshan Radio Company	LMBD301LT1G	112Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMDL301T1G	135Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diode
First Silicon Co., Ltd	FDR301	209Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes