MBD301G datasheet(3/5 Pages) ONSEMI

部件名	MBD301G

功能描述	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes

PDF	5 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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3 / 5 page

MBD301, MMBD301LT1

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Total Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Minority Carrier Lifetime

IF, FORWARD CURRENT (mA)

Figure 3. Reverse Leakage

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

0.2

0.4

0.6

0.8

1.0

1.2

100

6.0

1.0

0.1

0.01

0.001

010

500

3.0

6.0

9.0

1.6

1.2

0.8

0.4

f = 1.0 MHz

TA = −40°C

TA = 85°C

TA = 25°C

1.0

0.1

100

KRAKAUER METHOD

2.8

2.4

2.0

TA = 100°C

75°C

25°C

400

300

200

100

SINUSOIDAL

GENERATOR

BALLAST

NETWORK

(PADS)

SAMPLING

OSCILLOSCOPE

(50 W INPUT)

PADS

CAPACITIVE

CONDUCTION

FORWARD

CONDUCTION

STORAGE

CONDUCTION

DUT

IF(PEAK)

IR(PEAK)

Figure 5. Krakauer Method of Measuring Lifetime

MBD301G 数据表(PDF) 3 Page - ON Semiconductor

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