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CS209AYD8 数据表(PDF) 4 Page - ON Semiconductor |
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CS209AYD8 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 8 page ![]() CS209A http://onsemi.com 4 TYPICAL PERFORMANCE CHARACTERISTICS 0 Output Load (kΩ) Temperature (°C) Figure 2. Output Switching Delay vs. Output Load Figure 3. Output Switching Delay vs. Temperature Distance To Object (in.) Figure 4. Demodulator Voltage vs. Distance for Different RF 6.5 −20 1.5 0 8 6 4 2 4 8 12 16 20 −40 0 20 40 60 80 100 120 5.5 4.5 3.5 2.5 (T = 25°C, VCC = 12 V) (VCC = 12 V, RLOAD = 1.0 kΩ) Object Detected 5.0 kΩ 2.5 kΩ 7.5 kΩ 12.5 kΩ 15 kΩ 17.5 kΩ Object Not Detected, L Unloaded (T = 25°C, VCC = 12 V) 0.100 0.200 0.300 0.400 1.75 1.25 1.0 0.75 0.1 kΩ PRINCIPLE OF OPERATION The CS209A is a metal detector circuit which operates on the principle of detecting a reduction in Q of an inductor when it is brought into close proximity of metal. The CS209A contains an oscillator set up by an external parallel resonant tank and a feedback resistor connected between OSC and RF. (See Figure 5.) The impedance of a parallel resonant tank is highest when the frequency of the source driving it is equal to the tank’s resonant frequency. In the CS209A the internal oscillator operates close to the resonant frequency of the tank circuit selected. As a metal object is brought close to the inductor, the amplitude of the voltage across the tank gradually begins to drop. When the envelope of the oscillation reaches a certain level, the IC causes the output stages to switch states. The detection is performed as follows: A capacitor connected to DEMOD is charged via an internal 30 μA current source. This current, however, is diverted away from the capacitor in proportion to the negative bias generated by the tank at TANK. Charge is therefore removed from the capacitor tied to DEMOD on every negative half cycle of the resonant voltage. (See Figure 6) The voltage on the capacitor at DEMOD, a DC voltage with ripple, is then directly compared to an internal 1.44 V reference. When the internal comparator trips it turns on a transistor which places a 23.6 kΩ resistor in parallel to the 4.8 kΩ. The resulting reference then becomes approximately 1.2 V. This hysteresis is necessary for preventing false triggering. |
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