Nexperia

PUSB3F99

ESD protection for ultra high-speed interfaces

PUSB3F99

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© Nexperia B.V. 2017. All rights reserved.

Product data sheet

Rev. 1 — 15 December 2017

3 / 12

6 Characteristics

Table 5. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

II = 1 mA

6

-

-

V

ILR

reverse leakage current

per channel; VI = 3 V

-

-

1

μA

VF

forward voltage

II = 1 mA

-

0.7

-

V

Cline

line capacitance

f = 1 MHz; VI = 3.3 V

[1] -

0.5

0.6

pF

ΔCline

line capacitance difference

f = 1 MHz; VI = 3.3 V

[1] -

0.05

-

pF

surge

[2]

• positive transient

-

0.41

-

Ω

• negative transient

-

0.26

-

Ω

TLP

[3]

• positive transient

-

0.43

-

Ω

rdyn

dynamic resistance

• negative transient

-

0.28

-

Ω

IPP = 5.2 A

[2]

• positive transient

-

4.6

-

V

IPP = -4.4 A

[2]

VCL

clamping voltage

• negative transient

-

-2.2

-

V

[1]

This parameter is guaranteed by design.

[2]

According to IEC 61000-4-5 (8/20 μs current waveform).

[3]

100 ns Transmission Line Pulse (TLP); 50 Ω; pulser at 80 ns.