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STS01DTP06 数据表(PDF) 5 Page - STMicroelectronics |
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STS01DTP06 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() STS01DTP06 5/11 2.1 Electrical characteristics (curve) VBE(sat) (1) Base-emitter saturation voltage IC = -1A IB = -10mA -0.85 -1.1 V hFE (1) DC current gain IC = -1A VCE = -2V IC = -3A VCE = -2V 100 30 1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 % Table 4. Q2-PNP transistor electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Figure 1. Reverse biased area Q1 NPN transistor Figure 2. DC current gain Q1 NPN transistor Figure 3. DC current gain Q1 NPN transistor Figure 4. Collector-emitter saturation voltage Q1 NPN transistor |
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