2SC5264LS datasheet(1/2 Pages) ISC

部件名	2SC5264LS

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

2SC5264LS

www.iscsemi.com

2023-8-17

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

-V(BR)CEO= 450V(Min)

·

Collector-Emitter Saturation Voltage

-VCE(sat)= 1.0V(Max) @IC=2.5A

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1000

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

5

A

ICP

Collector Current (Pulse)

10

A

PC

Collector Power Dissipation

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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