RTQ035P02 datasheet(4/9 Pages) VBSEMI

部件名	RTQ035P02

功能描述	P-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

100

TJ = 25 °C

1.2

1.4

1.6

1.8

2.0

2.2

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.05

0.10

0.15

0.20

0.25

0246

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 4.1 A

Time (s)

1000

0.1

0.01

0.001

100

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

1 ms

10 ms

Limited by RDS(on)*

BVDSS

Limited

100 µs

100 ms

1s, 10 s

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RTQ035P02

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