MMBTA94-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA94

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-008,B

ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-400

Collector-Emitter Voltage

VCEO

-400

Emitter-Base Voltage

VEBO

-6

Collector Dissipation (Ta=25

°C)

350

Collector Current

-300

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic=-100

µA,IE=0

-400

Collector-Emitter Breakdown Voltage

BVCEO

Ic=-1mA,IB=0

-400

Collector-Emitter Breakdown Voltage

BVCES

Ic=-100

µA,V

BE=0

-400

Emitter-Base Breakdown Voltage

BVEBO

IE=-100µA,Ic=0

-5

Collector Cut-off Current

ICBO

VCB=-300V,IE=0

-100

Collector Cut-off Current

ICES

VCB=-400V,VBE=0

-1

µA

Emitter Cut-off Current

IEBO

VEB=-4V,IC=0

100

DC Current Gain (note)

hFE

VCE=-10V,IC=-1mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-50mA

VCE=-10V,IC=-100mA

300

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA,IB=-1mA

IC=-50mA,IB=-5mA

-0.20

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-10mA,IB=-1mA

-0.75

Output Capacitance

Cob

VCB=-20V,IE=0, f=1MHz

Note: Pulse test: PW<300

µs, Duty Cycle<2%

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