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UN1518-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UN1518-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UN1518 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-088,A ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current (Pulse) Note 2 ICM 6 A Collector Current (DC) IC 2.5 A Base Current IB 500 mA Total Device Dissipation PD 625 mW Storage Temperature TSTG -50 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test tp=300μs. δ ≤ 2% ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA 20 100 V Collector-Emitter Breakdown Voltage BVCEO*IC=10mA 20 27 V Emitter-Base Breakdown Voltage BVEBO IE=100µA 5 8.3 V Collector Cut-Off Current ICBO VCB=16V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA Collector Emitter Cut-Off Current ICES VCES=16V 100 nA Collector-Emitter Saturation Voltage VCE(SAT)* IC=0.1A, IB=10mA IC=1A, IB=10mA IC=2.5A, IB=50mA 10 70 130 15 150 200 mV Base-Emitter Saturation Voltage VBE(SAT)*IC=2.5A, IB=50mA 0.89 1.0 V Base-Emitter Turn-On Voltage VBE(ON)*IC=2.5A,VCE=2V 0.79 1.0 V IC=10mA, VCE=2V 200 400 IC=200mA, VCE=2V 300 450 IC=2A, VCE=2V 200 360 Static Forward Current Transfer Ratio hFE* IC=6A, VCE=2V 100 180 Transition Frequency fT IC=50mA, VCE=10V f=100MHz 100 140 MHz Output Capacitance Cob VCB=10V, f=1MHz 23 30 pF Turn-On Time t(ON) 170 nS Turn-Off Time t(OFF) VCC=10V, IC=1A IB1=-IB2=10mA 400 nS * Pulse test conditions. tp=300μs. δ ≤ 2% |
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