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UP2518-AE3-6-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UP2518-AE3-6-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 4 page ![]() UP2518 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 4 www.unisonic.com.tw QW-R206-083,A THERMAL CHARACTERISTICS AND DERATING INFORMATION 1000 800 600 400 200 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient Temperature (℃) Derating Curve f 1 f P D = f1 / fP D=1.0 D=0.2 D=0.5 D=0.1 D=0.5 200 150 100 0.1ms 0 1ms 10ms 0.1ms 1s 10s 200 50 Pulse Width Maximum Transient Thermal Resistance Devices were mounted on a 15mmx15mm ceramic substrate UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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